Abstract
The effect on Faraday rotation caused by stratification in an ionized medium and in semiconductor samples is examined. Expressions for rotation are derived in closed form for linear, exponential, and parabolic electron density profiles, including the effects of reflection at the boundaries. An expression in the form of a series is also derived for a general polynomial type of electron concentration variation. The change in rotation due to the deviation from the equivalent homogeneous carrier distribution is then examined for some experimental conditions in semiconductors and in the ionosphere.
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