Abstract
Hydrogen-like impurity states and Landau level transitions are used for tunable photoconductivity in GaAs and InSb.Resolutions down to 0.25 cm −1 have been achieved with impurity transitions in high purity GaAs and spin flip transitions in uniaxially stressed InSb. Tunable emission in the far infrared generated by electrical current heating has been first generated by cyclotron emission. Detailed studies of the emission linewidth and electronic lifetime have been performed for several semiconductors (InSb, GaAs, InP, CdHgTc). The application of stress enhances radiative spin flip transition leading to extremely narrow emission linewidths down to 0.2 cm −1 . New types of emission mechanisms have been found in two-dimensional carrier systems including electrical subband emission and the radiative decay of two-dimensional plasmons via grating structures.
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