Abstract
A far-infrared lasing device based upon conduction-band to heavy-hole level interband transitions within a double-barrier broken-gap structure is presented. The upper conduction-band level is populated by resonant tunneling electron injection, and the lower heavy-hole state is depopulated by ultrafast valence-band electron interband tunneling. Significant optical gain exceeding 103 cm−1 for operation in the frequency range 1.9–3.4 THz is predicted from a Kane multiband model based study of an unoptimized structure.
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