Abstract
The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel heterostructures due to its wide range of band alignments. We have recently exploited this advantage to demonstrate a new class of negative differential resistance (NDR) devices based on interband tunneling. We have also studied "traditional" double barrier (resonant) and single barrier NDR tunnel structures in the InAs/GaSb/AlSb system. Several of the interband and resonant tunneling structures display excellent peak current densities (as high as 4 x 1O A/cm2 ) and/or peak-to-valley current ratios (as high as 20:1 and 88:1 at 300 K and 77 K, respectively), offering great promise for high frequency and logic applications.
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