Abstract
Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s and 2p donor states, interpreted as partly being due to the nonspherical crystal symmetry. The utilization of the selective excitation of neutral donor bound excitons I2 allows the identification of the I2 rotational excited states. An interpretation of two-electron spectra in GaN involving excited states of I2 is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
