Abstract
Failure of MOS capacitors operated at elevated temperatures was studied. The time required for the devices to develop conducting paths through the oxide was found to vary with oxide thickness, temperature, and electrical bias. A thermally activated, electric‐field‐assisted Si‐O bond‐breaking process appears to be responsible for the oxide failure. A model is discussed in which the time to failure is expressed as an exponential function of the temperature and of the electric field within the silicon dioxide.
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