Abstract
The reduced testability of 3D integrated microelectronic systems poses severe challenges to microstructure diagnostics, fault isolation and failure analysis techniques that are required to detect and analyze electrical opens, high resistive contacts and electrical shorts of the interconnects in the wafer-bonded interface. The potential of applying advanced Scanning Acoustic Microscopy and Lock in Thermography methods for defect localization as well as the application of combined laser and Focused Ion Beam techniques for target preparation and defect diagnostics is demonstrated.
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