Abstract

Enthalpies of substitutional incorporation of dopants in both sublattices of III–V compounds were analysed using Phillips-van Vechten's dielectric two band model. It has been shown that in the case of very large size mismatch between dopant and host atom, the consequent disorder of the crystal potential can be more important factor in dopant incorporation than the valence mismatch. Present calculations support recent experimental results on “antisite” incorporation of Sb in Ga site in GaN.

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