Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer

Abstract

Although oxide thin-film transistors (TFTs) have drawn great interests in flexible displays, a key obstacle is the requirement of high-temperature annealing to realized mobility>10 cm $^{2}/\text {V}\cdot \text {s}$ . In this paper, a fully room-temperature strategy, involving the deposition of ~10 nm In–Ga–Zn–O (IGZO) channel layer and ~4 nm Al2O3 passivation layer, is introduced. The as-prepared flexible TFT on polymide substrate exhibits a saturation mobility of 15.3 cm $^{2}/\text {V}\cdot \text {s}$ , $V_{{\text {th}}}$ of 3.08 V, and on/off current ratio of $2.3\times 10^{{\text {7}}}$ . Thickness-dependent analysis indicates that the interface between Al2O3 and IGZO is composed of negative O-rich layer, which impel the energy band bending inside the IGZO layers and release of electrons from traps. This paper opens up a route to achieve fully room-temperature fabrication of high-performance flexible TFT.