Abstract
Top-contact thin-film transistors (TFTs) are fabricated in this work using atomic layer deposition (ALD) Al2O3 as the gate insulator and radio frequency sputtering InGaZnO (IGZO) as the channel layer so as to investigate the effect of Al2O3 thickness on the performance of IGZO-TFTs. The results show that TFT with 100-nm-thick Al2O3 (100nm-Al2O3-TFT) exhibits the best electrical performance; specifically, field-effect mobility of 5cm2/Vs, threshold voltage of 0.95V, Ion/Ioff ratio of 1.1×107 and sub-threshold swing of 0.3V/dec. The 100nm-Al2O3-TFT also shows a substantially smaller threshold voltage shift of 1.1V after a 10V gate voltage is applied for 1h, while the values for TFTs with an Al2O3 thickness of 220 and 280nm are 1.84 and 2V, respectively. The best performance of 100nm-Al2O3-TFT can be attributed to the larger capacitance and the smaller amount of total trap centers possessed by a thinner insulator compared to the thicker ones.
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