Facile one-pot electropolymerization of novel Cu complexed conducting polymer for Resistive Random Access Memory

Abstract

An innovative one-pot electrochemical method has been studied for the Polypyrrole-Cu (PPy-Cu) composite films synthesis as the active layer of the Resistive Random Access Memory (ReRAM). Cu has been uniformly distributed in PPy-Cu composite films and exhibits two valence states of Cu (0) and Cu (II). The existence of Cu (II) is beneficial for keeping stable resistive switching performance. The Pt/PPy-Cu/Pt ReRAM device exhibits excellent memory performance with a low threshold voltage, a long retention time and good endurance cycles. The resistive switching mechanism is dominated by the Space Charge Limited Current (SCLC) effect accompanied by Schottky emission.