Abstract
Antimony oxide microwires (MWs) were grown on Si/SiO2 substrate by proficient non-catalytic economically promising method based on ambient heating of metallic source materials in crucible in a facile conventional muffle furnace. The produced antimony oxide microwires were 200–300nm in diameter and tens micron in length. These ultra-long microwires were characterized by FESEM, TEM, XRD and Raman analysis. This approach is useful to develop grams quantities of microwires on Si/SiO2 substrate.
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