Abstract
CeO2 films are technologically important as a buffer layer for the integration of superconducting YBa2Cu3O7 films on biaxially textured Ni substrates. The growth of YBa2Cu3O7 layers on the CeO2 cap layers by the trifluoroacetate (TFA) route remains a critical issue. To improve the accommodation of YBa2Cu3O7 on CeO2, surface conditioning or CeO2 is required. In this work we have applied ex-situ post-processes at different atmospheres to the CeO2 layers deposited on YSZ single crystals using rf sputtering. XPS analysis showed that post-annealing CeO2 layer in Ar/H2/H2O catalyses in an unexpected way the growth of (001)- terraces. We also report on the growth conditions of YBa2Cu3O7-TFA on CeO2 buffered YSZ single crystal grown by chemical solution deposition and we compare them with those leading to optimized YBa2Cu3O7-TFA films on LaAlO3 single crystals. Critical currents up to 1.6 MA/cm2 at 77 K have been demonstrated in 300 nm thick YBa2Cu3O7 layers on CeO2/YSZ system. The optimized processing conditions have then been applied to grow YBa2Cu3O7-TFA films on Ni substrates having vacuum deposited cap layers of CeO2.
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