Abstract
We demonstrate an antireflective coating structure, which is based on the three-layer metal interference called the Fabry-Perot structure, for a deep-ultraviolet binary mask. The antireflective coating structure is composed of a metal-oxide-metal stack. By addition of different optimized structures, reflectances of less than 1.5% at both 248 and 193 nm have been achieved. At the three-layer Fabry-Perot structure, the bottom chrome layer provides suitable absorption. By controlling the thickness of the intermediate silicon oxide layer, we can tune the minimum-reflection regime to the desired exposure wavelength. The top metal layer can prevent charge accumulation during e-beam writing.
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