Abstract
A strong intensity modulation is found in spatially and angular resolved photoluminescence spectra of InGaN∕GaN heterostructures and quantum wells epitaxially grown on Si(111) substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN∕Si and the Air/InGaN interfaces. It can be used for a wavelength stabilization of the sample upon temperature change and, e.g., in the case of light emitting diodes, to additionally reduce the blueshift at increasing injection currents. A simple geometric approach has been chosen to calculate the influence of layer thickness, absorption and refractive indices, as well as detection angle. The cavity can be described quantitatively by a simple three layer Fabry-Perot model. An analytical expression is derived for the external luminescence line shape. Microphotoluminescence measurements at samples with the silicon substrate locally removed corroborate the model.
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