Abstract
We investigate SrBi2Ta2O9 (SBT) films preparedby the sol-gel spin method with different spin rates or differentanneal conditions for the first layer of SBT, as promisingferroelectric layer materials applied to ferroelectric random accessmemory (FeRAM). All the specimens in this experiment have similarSBT crystal orientations of (115), (020), (220), and (135). ThePt/SBT/Pt capacitor with coating of 3000 rpm spin rate has a perfectrectangle shape of hysteresis loops, remanent polarization of7.57 μC/cm2 and coercive voltage of 0.816 V at 5 V voltageamplitude. These characteristics are better than those with coating of3500 rpm spin rate, which is attributed to the influence for thicknessand grain size of the film from depressed spin rate. Slow-rate annealin the furnace for the first layer of SBT can improve the crystallizationprocesses and properties for SBT layers slightly, compared with rapidthermal annealing. The ion damage from etching for the top electrodecan influence leakage current characteristics of the Pt/SBT/Ptcapacitor at positive voltage bias.
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