Abstract
SrBi2Ta2O9 (SBT) film was crystallized to form fine grains and a smooth surface by rapid thermal annealing (RTA), but form large grains and a rough surface by main furnace annealing. The sequence of furnace annealing was changed to improve the morphology of the Pt/SBT interface and the leakage property of a Pt/SBT/Pt capacitor. For the conventional sequence of furnace annealing before top electrode deposition, the capacitor showed a good switching polarization (P*-P∧) of 17 µC/cm2 but a high short fail rate of 56% due to the rough Pt/SBT interface. However, using the new sequence of furnace annealing after top electrode deposition on RTA-treated SBT film, a very smooth Pt/SBT interface and a resultant low short fail rate of 7% was obtained, but the value of P*-P∧ was decreased to 14 µC/cm2 due to a restrained grain growth of the SBT film under Pt top electrode.
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