Abstract

Polyaniline (PANI) doped with CSA was synthesis by chemical polymerization method using ammonium persulphate as oxidizing agent. Thin films of (PANI-CSA) have been prepared by spin coating method and characterized by (FTIR) spectra. Morphology and diameters of the nanoconducting polymer were measured by Atomic Force Microscope (AFM). Solar were fabricated by depositing thin films of polyaniline (PANI) doped with CSA acid onto n-type Si wafers using spin coating method. The J-V characteristics of this hybrid solar cell were studied in the dark and under illumination and photovoltaic activity is clearly demonstrated. The PANI-CSA /n-Si solar cells obtained in this work have yielded a conversion efficiency η = 4% with short circuit current (Jsc) of 1.86 mA/cm2 and open circuit voltage (Voc) of 202 mV under AM 1.5 solar simulator (100 mW/cm2).

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