Fabrication of ZnSe/Si P–I–N photodiode by IR furnace chemical vapor deposition

Abstract

This paper reports the characteristics of the ZnSe( n +)/ZnSe( n −)/Si( p) P–I–N photodiode in the temperature range of 10–300 K. In this paper, the ZnSe epilayers are grown on p-type (111) Si substrate by using an IR CVD system and two-step growth methods. Since the resistivity of the intrinsic ZnSe layer is high, in order to obtain an n-type ZnSe layer, we adopt indium (In) as the dopant. To control the indium drive in time, the ZnSe( n +)/ZnSe( n −) epilayers on the Si structure are used to fabricate the ZnSe( n +)/ZnSe( n −)/Si( pP–I–N photodiode. On the other hand, the characteristics of the ZnSe( n +)/ZnSe( n −)/Si( p) heterojunction P–I–N photodiode will also be discussed, such as the cutting voltage, photocurrent and responsivity from 10 K to 300 K.