Abstract
AbstractZnO/Zn0.85Mg0.15O heterostructure thin films were prepared by sol‐gel spin‐coating method on sapphire (0001) substrate with different thickness of ZnO layer. X‐ray diffraction patterns showed that all the samples were preferentially oriented in [0001] direction with no phase separation. Optical transmission spectra showed the clear band‐edge absorption of ZnO and Zn0.85Mg0.15O layer, and the thickness of each layer was roughly estimated. Also, two UV emission peaks originated from each layer at 3.2 eV and 3.55 eV were observed in photoluminescence measurement. And, the emission peak at 3.2 eV of ZnO layer shifted to higher energy side with decrease in the thickness of ZnO layer. This result indicates that Mg ions slightly diffused to the ZnO layer in several nanometers of ZnO/Zn0.85Mg0.15O interface by thermal treatment in growth process (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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