Abstract
In-situ-grown YBCO thin films were prepared on a MgO substrate by rf magnetron sputtering with a dc-biased substrate holder using a stoichiometric Y1Ba2Cu3Oy target. The variable-thickness bridges with the bridge length of 80 nm-200 nm were fabricated in these films by means of photolithography and slant evaporation techniques. The current-voltage characteristics of the bridge in rf radiation show the structure of the rf-induced steps over a wide temperature range.
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