Fabrication of V1-xTixO2 thin films by metal-organic decomposition using carbon thermal reduction

Abstract

V1-xTixO2 thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition. The VO2 phase in the range of x = 0–0.25 was obtained by preparing the precursor film calcined at 300 °C for 15 min in a N2 atmosphere and firing these films at 580 °C–600 °C for 15 min in a N2 atmosphere. V1-xTixO2 thin films were successfully obtained by carbon thermal reduction. In the resistance–temperature characteristics, the reduction of hysteresis and the broadening of metal–insulator transition (MIT) occurred with increasing x, and hysteresis and a significant resistance change due to the MIT disappeared at x = 0.25. The temperature coefficients of resistance (TCRs) at x = 0–0.25 were as high as −4.1∼−5.5%/K at 27 °C. At x = 0.25, TCRs were −4.3∼−7.0%/K from 45 °C to 65 °C and a flat temperature dependence of TCR were realized at the temperature range from 10 °C to 80 °C.