Abstract
Axis-oriented V2O5 thin films were prepared on fused quartz substrates by metal–organic decomposition (MOD). Then these films were reduced to VOx thin films by heat treatment at a temperature of 530 °C and a pressure of 1.2 Pa in O2. The obtained VOx thin films exhibited an abrupt phase transition with a resistivity change of up to 4 orders of magnitude. These VOx films had a high temperature coefficient of resistance (TCR) of up to 4.8%/K at 300 K and these values were over two times higher than those of the films fabricated on SiO2/Si substrates.
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