Abstract
We report on the fabrication and characterization of a Ga2O3-based UV-C photodetector using the aerosol deposition (AD) method. By optimizing the size and crystallinity of the Ga2O3 powder, we were able to obtain a uniform thin film with high transmittance (70–80%) without the need for additional heat treatment or high vacuum environments. The resulting Ga2O3 film exhibited a high and selective response to 254 nm wavelength light, even without any treatment, and remained stable when exposed to γ-radiation. The photodetector also performed well in extreme temperatures (−196 °C–150 °C), making it suitable for use in harsh environments, such as the space industry. Our findings demonstrate the potential of the AD method for the fabrication of high-quality Ga2O3 thin films for photodetector applications.
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