Abstract
We have fabricated n- as well as p-channel in-plane gate transistors by focused compensation doping of a p-doped pseudomorphic GaAs/In 0.08Ga 0.92As/Al 0.33Ga 0.67As heterostructure. Both types show transistor operation with higher drain currents for the n-channel version. Both types could be completely depleted. Only the n-channel transistors show drain current saturation with the increasing drain–source voltage.
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