Abstract
In this paper, we fabricate the in-plane gate transistors (IPGTs) with different geometries. The channel of IPGTs consists of a highly doped n-GaAs layer and is isolated by wet etch to separate the in-plane gate and channel. Through the in-plane gate on both side of channel, drain current is successfully modulated with different gate biases. DC characteristics of IPGTs are compared in different gate widths. We also measure the electrical performances at low temperature down to 150k. Opposite to other conventional field-effect transistors, the drain current becomes larger and the threshold voltage is shifted toward negative value at low temperature‥ Finally, based on the experimental data, we proposed a preliminary model to explain the phenomenon of IPGTs we observed.
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