Abstract

Two different electron sensitive polymers, polymethylglutarimide and polymethylmethacrylate were employed to form submicron Au airbridges for use in mesoscopic devices. A series of test devices was fabricated in which this technique was used to make electrical contact to a submicron elliptical gate placed within a quantum point contact. The airbridge was patterned by electron beam lithography and metal lift-off. Conductance measurements were performed on the devices at low magnetic fields. The results confirmed both the presence of the elliptical antidot as a negative voltage was applied to the center gate, as well as the nonintrusive nature of the airbridge.

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