Abstract
The pn heterojunction diodes were fabricated using p-type Cu-doped Mg(OH)2 and n-type ZnO. The Cu-Mg(OH)2 thin films were fabricated via electrochemical deposition (ECD) using an aqueous solution of Mg(NO3)2 and Cu(NO3)2. The ZnO films were deposited on the Cu-Mg(OH)2 film via ECD from a solution of Zn(NO3)2. The Cu-Mg(OH)2 films were transparent in the visible range and showed a clear p-type response during photoelectrochemical measurement. The ZnO/Cu-Mg(OH)2 diodes exhibited appreciable rectification properties. Thus, Mg(OH)2 can be a promising ultra-wide bandgap semiconductor for transparent electronics applications.
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