Abstract
Abstract Transparent conductive NiTe2 electrodes have been fabricated via magnetron sputtering followed by chemical exfoliation. The freshly deposited NiTe2 thin films with thicknesses of 9 nm exhibited an electrical resistivity of 82 μΩ cm and transparency of 53%, which were further increased by chemical exfoliation up to 289 μΩ cm and 61% (70% at a wavelength of 285 nm), respectively. The thin films obtained by sputtering an intermetallic NiTe2 target were characterized by lower electrical resistivity as compared to that of the films fabricated by co-sputtering of Ni and Te targets, which could be attributed to the larger number of grains with the out-of-plane c-axis orientation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
