Abstract
Alternative photo-sintering techniques for thermal annealing processes are used to improve the morphology, layer properties, and enhance solar cell performance. The fast, nontoxic, low cost, and environmentally friendly characteristics of Cu2ZnSnS4 have led to its consideration as an alternative potential absorber layer in copper indium gallium diselenide thin film solar cells. This work investigates the photo-sintering process for the absorber layer of Cu2ZnSnS4 solar cells. A Cu2ZnSnS4 layer was grown by hot-injection and screen-printing techniques, and the characteristics of the photo-sintered Cu2ZnSnS4 layer were evaluated by X-ray Diffraction, Raman spectroscopy, Energy dispersive X-ray analysis, Ultraviolet-visible spectroscopy, and field emission scanning electron microscopes. Overall, the optimal composition was Cu-poor and Zn-rich, without a secondary phase, estimated optical band-gap energy of approximately 1.6 eV, and enhanced morphology and kesterite crystallization. Using an intensity pulse light technique to the CZTS layer, fabrication of the solar cell device demonstrated successfully, and the efficiency of 1.01% was achieved at 2.96 J/cm2.
Highlights
Production of copper indium gallium diselenide (CIGS) solar cells is limited because indium and gallium are facing supply shortages and cost increases from competition with other manufacturing sectors, such as the display industry
Specific CZTS synthesis is required because of harmful secondary phases that are quickly formed in nonstoichiometric growth conditions, and the CZTS phase is an essential requirement for achieving high-efficiency solar cells [8]
We have successfully demonstrated the photo-sintering technique for the CZTS thin film solar cell
Summary
Production of copper indium gallium diselenide (CIGS) solar cells is limited because indium and gallium are facing supply shortages and cost increases from competition with other manufacturing sectors, such as the display industry. Kesterite materials using Cu2 ZnSnSe4 , Cu2 ZnSnS4 (CZTS), and Cu2 ZnSn(S,Se) have been evaluated as potential alternatives for chalcopyrite absorber materials, given their similar device structure to CIGS, with comparable cost reduction and increased production with the use of naturally abundantly and non-toxic materials [1]. These CZTS absorbers are semiconducting with a large optical absorption coefficient of 104 cm−1 and a direct band gap of 1.13 eV for a high conversion efficiency of 12.6% [2], which allows for a layer with a thickness of a few microns. The CZTS phase is very complex, with narrow phase stability that is not easy to control during synthesis [1]
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