Abstract
Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.
Highlights
The sp2 carbon hexagonal crystal structure of graphene is a two-dimensional plane structure which is only a single atomic layer thick and considered the materia prima for other forms of carbon [1]
When single-walled carbon nanotube (SWCNT) is used as a semiconducting material in nanoelectronic devices, graphene electrodes have the inherent advantages when compared to metal electrodes
An atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain
Summary
The sp carbon hexagonal crystal structure of graphene is a two-dimensional plane structure which is only a single atomic layer thick and considered the materia prima for other forms of carbon [1]. There is a low contact resistance between SWCNT and graphene, which is attributed to their similar work functions This characteristic is beneficial to the fabrication of high-performance electronics. An atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. This method provides a useful platform to examine the properties of materials at the nanometer, and even the molecular scale which are placed in the nanogaps. Electrical characterizations indicate the SWCNT-graphene FET exhibits p-type semiconductor properties, which can provide a new method to fabricate all-carbon electronic devices
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