Abstract
Graphene has been widely studied because of its high mobility, superior mechanical properties and excellent thermal and chemical stability. This paper describes a novel and flexible method to fabricate graphene interdigitated electrodes and all-carbon field effect transistor (FET). In this approach, graphene is first grown by chemical vapor deposition (CVD) and assembled onto a microelectrode chip. Then, an atomic force microscopy (AFM) based mechanical machining method is employed to cut the graphene into interdigitated electrodes with nanogaps. Finally, single-walled carbon nanotubes (SWCNTs) are assembled onto the graphene interdigitated electrodes using dielectrophoresis to complete the FET device. The electrical properties of the fabricated SWCNT-graphene FET were investigated, and the I-V curves demonstrated the p-type nature of SWCNTs in the FET.
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