Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

Abstract

We demonstrate a technique for fabricating suspended gallium nitride (GaN) microstructures without direct etching of GaN. The process combines a selective area growth of GaN-on-patterned-silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. The pattern-dependent lateral growth property of GaN growth is also discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)