Fabrication of silicon field emission points for vacuum microelectronics by wet chemical etching

Abstract

The fabrication of sharp silicon tips for field emission cathodes has been investigated using anisotropic and isotropic wet chemical etching techniques. Formulations of potassium hydroxide, water and alcohol are used as the anisotropic etchants. The effects of isopropyl, secondary butyl and tertiary butyl alcohols on tip formation are examined. An isotropic etchant using a mixture of hydrofluoric, nitro and acetic acids is also used to form similar cathode structures for comparison. The silicon needles formed are intended for use in vacuum microelectronic devices.