Abstract
A process is presented to fabricate a coplanar buried metal - - metal junction on the surface. The surface is etched with reactive ion etching (RIE) through a PMMA mask where the junction patterns have been defined using the e-beam technique. The buried AuPd metallic wires of the junction, 200 nm in width and 10 nm in thickness, are fabricated by the lift-off technique. After the RIE step, the difficulties of reaching an electrode separation in the 40 nm range on are also discussed.
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