Abstract
Hydrogenated amorphous silicon solar cells were fabricated using solution-based processes. All silicon layers of the p-i-n junction were stacked by a spin-cast method using doped and non-doped polydihydrosilane solutions. Further, a hydrogen-radical treatment under vacuum conditions was employed to reduce spin density in the silicon films. Following this treatment, the electric properties of the silicon films were improved, and the power conversion efficiency of the solar cells was also increased from 0.01% to 0.30%–0.51% under the AM-1.5G (100 mW/cm2) illumination conditions.
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