Fabrication of single-electron devices using dispersed nanoparticles and fitting experimental results to values calculated based on percolation model

Abstract

We calculated the connection probability, P C, between electrodes on the basis of the triangular lattice percolation model for investigating the effect of distance variation between electrodes and the electrode width on fabricated capacitively coupled single-electron transistors. Single-electron devices were fabricated via the dispersion of gold nanoparticles (NPs). The NPs were dispersed via the repeated dropping of an NP solution onto a chip. The experimental results were fitted to the calculated values, and the fitting parameters were compared with the occupation probability, P O, which was estimated for one drop of the NP solution. On the basis of curves of the drain current versus the drain-source voltage (I D−V DS) measured at 77 K, the current was suppressed at approximately 0 V.