Abstract
Silicon oxide thin films were grown from the liquid source, polysilazane, by using mist chemical vapor deposition (CVD) at temperatures of 200–350 °C. The films were grown with a reasonable growth rate of 12 nm/min at the temperature of 200 °C, and they showed resistivity of the order of 1013 Ω·cm, although the incorporation of carbon and oxygen remains as a problem to be discussed and solved in the future. The results are encouraging for the future application of mist CVD for the growth of silicon oxide films on plastic substrates.
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