Abstract
Silicon nanowire (SNW) field-effect transistors (FETs) have proven an emerging highly sensitive bio/chemical sensor due to their huge surface-to-volume ratios. However, fabrication of SNWs with both high output and low cost is still challenging. This paper presents a new fabrication method using sidewall mask technology. By depositing a conformal thin film on a sacrificial pattern and removing the surface film, the vertical part of the film on the pattern sidewall is left as a mask, of which the feature size is determined by the film thickness that can be readily controlled in nanometer regime. This allows wafer-scale, high output, and low cost fabrication of SNWs without need of advanced lithography facilities. The SNWs are operated in a FET configuration by applying gate voltages via a reference electrode immersed into solutions. Demonstrated as a pH sensor, the SNW FETs achieve sensitivity as high as 54.5 mV/pH for pH values from 1 to 12, approaching the theoretical Nernstian limit.
Published Version
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