Fabrication of Silicon Field Emitter Arrays with 0.1-µm-Diameter Gate by Focused Ion Beam Lithography

Abstract

Cone-shaped silicon (Si) field-emitter arrays (FEAs) with 0.1-µ m-diameter gates were fabricated by focused ion beam (FIB) lithography. In the fabrication process, a 200 keV Be2+ FIB with a beam diameter of 0.06 µ m was irradiated to a positive-tone electron-beam resist to form an array of silicon oxide ( SiOx ) disks used as masks for cone-shape etching of a Si substrate. We have succeeded in the operation of the present FEA and obtained the emission current of 1 nA/tip at the gate voltage of 25 V.