Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy

Abstract

Fabrication of SiGe/Si quantum wire (QWR) structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy (GS-SiMBE) is reported. Cross sectional image of transmission electron microscope (TEM) clarified a crescent shaped SiGe layer at the bottom of the V-groove. Existence of the quantized state in QWR was evidenced by photoluminescence (PL) spectra of the QWR grown by selective epitaxial growth (SEG) technique.