Fabrication of SiC-doped MgB2 coated conductors by a simple process

Abstract

We have fabricated pure and SiC-doped MgB2 thick films on textured Cu (100) tapes with a simple architecture and by an easy process. Firstly, SiC-impurity layers were deposited on Cu tapes at room temperature by using pulsed laser deposition (PLD). Then, MgB2 thick films were grown on the top of SiC/Cu in the temperature range of 460–540°C by using hybrid physical–chemical vapor deposition (HPCVD). The SiC-doped MgB2/Cu conductors exhibit critical temperatures ranging between 36 and 38K with superconducting transition width (ΔTc) of about 0.4−1K. The effects of SiC-doping on the microstructure and critical current density (Jc) of MgB2/Cu conductors are discussed.