Abstract
A new silicon etching process for imprint mold fabrication is developed. A special sample bed, which is coated by teflon film, is placed on the RF bias electrode in the conventional ICP etcher. Silicon is etched by mixture gas plasmas of Ar, SF 6 and C 4F 8 (or CHF 3). The silicon side etching can be reduced by use of the teflon coated sample bed. When the switching process is used, fine and deep silicon patterns with smooth silicon surface can be obtained for the teflon coated sample bed. The silicon pattern of 0.1 μm wide with the aspect ratio of 30 can be fabricated. A silicon mold is fabricated by the new etching process. A fine pattern of 0.2 μm wide can be transferred to a polymethylmethacrylate (PMMA) film by the thermal imprinting.
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