Fabrication of Si microstructures using focused ion beam implantation and reactive ion etching

Abstract

Localized Ga implantation by means of a focused ion beam and subsequent deep reactive ion etching is used to fabricate microstructures or nanostructures in Si. It is found that the area irradiated with the focused ion beam acts as an etch stop in reactive ion etching. The etch rate ratio between the unimplanted and Ga-implanted area increases to 2.56 with an increasing Ga ion dose up to 1.59 × 1016 ions cm−2. However, the etch rate ratio decreases with further increase in ion dose and the surface of the etched Si microstructures is concave due to the effect of ion sputtering during focused ion irradiation. This technique is promising for the fabrication of 3D nanostructures in Si.