Fabrication of quantum point contacts and quantum dots by imprint lithography

Abstract

We demonstrate the integration of imprint lithography into nanoelectronic device fabrication. The gates of quantum point contacts and quantum dots were patterned by imprint lithography. A Si mold with the gate pattern is embossed into a PMMA film located on top of the GaAs/AlGaAs heterostructure. The Schottky gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 120 to 600 nm for the quantum point contacts and from 100 to 1000 nm for the quantum dots. Transport studies performed at T=4.2 K show conductance quantization with varying gate voltages for the split-gate quantum point contacts and the upper and lower split-gates of the quantum dot.