Abstract
An attempt has been made to fabricate p -ZnO by direct doping (codoping) of ZrN into ZnO thin films. The ZrN codoped ZnO (ZNZO) thin films of different concentrations (ZrN= 1, 2 and 4 mol %) have been grown on sapphire substrates by RF magnetron sputtering. The grown films have been characterized by X-ray diffraction (XRD), Hall effect measurement, photoluminescence (PL) and time-of-flight secondary-ion mass spectroscopy (ToF SIMS) analysis. XRD studies reveal that all the films are preferentially oriented along (002) plane. The Hall measurement showed that 1 and 2 mol% ZNZO films exhibit n -type conductivity due to the insufficient amount of nitrogen incorporation. However, 4 mol% ZNZO film showed p -type conduction as the sufficient amount of nitrogen has been incorporated into the film. The resistivity and hole concentration of the fabricated p -ZnO have been found as (1.92×10-1 Ωcm) and (2.76 x 10 18 cm - 3 ) respectively. The red shift in near-band-edge emission observed from PL evidenced the formation of p-conductivity in ZNZO films. The obtained p -conductivity has been well supported by XRD and PL studies. The presence of dopant in the film has been confirmed by ToF-SIMS depth profile analysis.
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