Abstract
Pseudocubic SrRuO3 (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO3. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO3 <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO2 on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.
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