Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE)

Abstract

Phenomena of electrical and optical properties in porous silicon (PSi) remain interested. In this study, we focus on fabrication of PSi on N-type Si(100) surface using photolithography and reactive ion etching (RIE) methods with variations of etching times for10, 20, 30, and 40 min. SEM analysis demonstrated similar Psi in shape and size. Based on the profilometer and the four-point probe (FPP) measurement, the pore depth and the resistivity of Psi increase with the increasing etching time. The pores can be consideredas a defect on the silicon surface which inhibits electron diffusion so that the resistivity will increase.