Abstract
We have developed a crystallization process, where the crystallization temperature is lowered to the conventional rapid thermal annealing (RTA) process and the metal contamination is reduced compared to the conventional vapor-induced crystallization (VIC) process. a-Si film on the seed layer, which was crystallized by the VIC process, was crystallized by the RTA process at 680°C for 5 min. The poly-Si film appeared as a needlelike growth front with a relatively well-arranged Si(111) orientation. Moreover, the Ni concentration in the poly-Si film was reduced to 3 × 10 17 cm ―3 . The reduction in metal contamination could be helpful to achieve a low leakage current in poly-Si thin film transistors.
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