Fabrication of poly‐Si complementary metal oxide semiconductor inverter by all sputtering deposition process

Abstract

AbstractDirect current sputtering was used for deposition of Si film for precursor film of excimer laser annealing, n+‐Si/p+‐Si film for source/drain contact, and SiO2 film for gate insulator of polycrystalline silicon thin‐film transistor. Using these methods, poly‐Si thin‐film complementary metal oxide semiconductor inverter was fabricated by all sputtering process for the first time. The field‐effect mobility was, respectively, 6.5 and 12.5 cm2/Vs for n‐TFTs and p‐TFTs. This inverter exhibits a full rail‐to‐rail swing and abrupt voltage transfer characteristics over the entire voltage range, and the output voltage gain was ~117 at Vdd = 20 V.